Valeria Tovt(1), Igor Barchiy(2*), Michal Piasecki(3), Iwan Kityk(4), Anatolii Fedorchuk(5)

(1)  Department of Chemistry, Uzhgorod National University, Pidgirna St. 46, 88000 Uzhgorod, UKRAINE
(2)  Department of Chemistry, Uzhgorod National University, Pidgirna St. 46, 88000 Uzhgorod, UKRAINE
(3)  Institute of Physics, Jan Dlugosz University, Armii Krajowej 13/15, 42-200 Częstochowa, POLAND
(4)  Faculty of Electrical Engineering, Częstochowa University of Technology, Dabrowskiego 69, 42201 Częstochowa, POLAND
(5)  Department of Inorganic and Organic Chemistry, Lviv National University of Veterinary Medicine and Biotechnologies, Pekarska St. 50, 79010 Lviv, UKRAINE
(*) Corresponding Author

Investigations of the TlInP2Se6–In4(P2Se6)3 System and its Optical Properties


Abstract



The equilibrium phases were investigated and the corresponding phase diagram constructed for the TlInP2Se6–In4(P2Se6)3 system from physical and chemical analyses, namely differential thermal analysis (DTA), X-ray diffraction (XRD), and microstructural analysis (MSA). It was established that this system belongs to the eutectic type and is characterized by the formation of boundary solid phases containing complex compounds. Single crystals of the compounds TlInP2Se6 and In4(P2Se6)3 were grown using the Bridgman method. Both crystals were found to exhibit diffuse reflection spectra and photoinduced dependence of birefringence at various IR wavelengths generated by CO2 laser irradiation. Birefringence properties were investigated using the Senarmont method.

Keywords


phase diagram; solid solution; crystal structure; optical properties; direct-gap semiconductor; indirect-gap semiconductor; photoinduced birefringence

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